.png)
Invited Presentation
SPECIAL
Lottie Murray (she/her/hers)
Graduate Student
University of Delaware
New Castle, Delaware, United States
Helder V. Carneiro
PhD Candidate
University of Delaware
Newark, Delaware, United States
Caelin Celani, PhD (he/him/his)
Postdoctoral Fellow
University of Delaware
Claymont, Delaware, United States
Eric Herrmann
University of Delaware
Newark, Delaware, United States
Xi Wang
University of Delaware
Newark, Delaware, United States
Karl S. Booksh, PhD
Professor
University of Delaware
Newark, Delaware, United States
Matthew Doty
Professor
University of Delaware
Newark, Delaware, United States
Harnessing quantum mechanics and the unique optical properties of two-dimensional (2D) materials has enabled significant progress in quantum photonic technologies, such as quantum key distribution for secure communication. In this work, we investigate gallium selenide (Ga2Se2) due to its strain-tunable bandgap, which holds promise for integration into next-generation quantum devices. Thin Ga2Se2 flakes are transferred onto patterned substrates to systematically induce reproducible strain profiles. Spatially resolved photoluminescence (PL) mapping is employed to characterize the effects of strain on the material’s bandgap. This approach enables the collection of robust, high-resolution datasets. To further understand the relationship between induced strain and PL emission peak shifts, we combine machine learning techniques with physics-based simulations. Additionally, predictive modeling informed by experimental data is used to reduce the reliance on computationally expensive simulations and to estimate strain distributions across the sample.